Nowadays, data storage is gaining more and more importance in human life. All electronic and digital devices require memory to reduce power consumption. The concept of “more data in less space” is useful for increasing system performance and overall system efficiency. We generally used semiconductor memory as “SRAM”. SRAM can be abbreviated “Static Random Access Memory”. Many VLSI chips may have SRAM memory due to their large storage capacity and fast access time, where the word static indicates that it does not need to be refreshed habitually but the DRAM needs to be refreshed habitually. DRAM can be abbreviated as "Dynamic Random Access Memory", which is another type of memory. Both memories can be classified by “Random Access Memory: (RAM). Say no to plagiarism. Get a tailor-made essay on "Why Violent Video Games Shouldn't Be Banned"? Get an original essayIn this article the power analysis of 6-transistor SRAM is compared to that of 7-transistor SRAM. As a result, the power dissipation of 7 transistors is high compared to 6 transistors. The power dissipation of the 6T SRAM is approximately 2,991 mW and the power dissipation of the 7T SRAM is approximately 3,183 Mw. SRAMs are mainly used for mobile applications, due to their ease of use and low power dispersion. In this paper the schematics of 6T SRAM and 7T SRAM are drawn using DSCH software and the layouts are drawn using MICROWIND software. In recent days, static random access memory has become the main part in the digital world. Because that occupies the largest portion of the SOC (system-on-chip). The device requires SRAM memory mainly to dissipate small amounts of power. But dynamic power dissipation causes problems in digital circuits because dynamic power depends on the supply voltage, switching frequency, and output voltage swing. Dynamic power dissipation can be minimized by reducing the supply voltage. At the same time, low supply voltage leads to performance degradation and also decreases the threshold voltage which in turn increases the subthreshold current and thus increases static power dissipation. This article discusses the power dissipation of 6 transistors and 7 SRAM transistors. Also includes functional view of SRAM 6T and 7T cells. Please note: this is just an example. Get a custom paper from our expert writers now. Get a Custom Essay A conventional 6T SRAM is made up of 6 transistors forming two cross-coupled inverters. This bit cell can read and write single-bit data. When a bit is stored in memory, the 6T SRAM acts like a latch. The cross-coupled inverter model causing large area consumption is a disadvantage of the SRAM 6T compared to the resistive load. Conventional SRAM with 6 transistors is shown in Figure 1, and 6T SRAM has three states: read, write, and hold.